IPB144N12N3 G
IPI147N12N3 G
IPP147N12N3 G
™
"%&$!"# 3 Power-Transistor
Product Summary
Features
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Type
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Package
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Marking
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Maximum ratings, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65
Parameter
Symbol Conditions
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Value
Unit
T 7 U
R aUA7 & 0
-.
T 9
U
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I ;$]bY`R
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IPB144N12N3 G
IPI147N12N3 G
Parameter
IPP147N12N3 G
Values
Symbol Conditions
Unit
min.
typ.
max.
%
%
)&,
%
%
,(
)*(
%
%
Thermal characteristics
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F?4E:@ ? 42 D6
R aUA9
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R aUA7
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4> 4@ @ =:?8 2 C62
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Electrical characteristics, 2 ET W U F?=6DD @ E96CH:D6 DA64:7:65
Static characteristics
C2 :? D@ FC46 3 C62 I"aU#
V ;I5V >I I ;
W
*
+
,
16C@ 82 E6 G@ =E2 86 5C
2 :? 4FCC6?E
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V ;I
/ V >I /
T W U
%
(&)
)
V ;I
/ V >I /
T W
U
%
)(
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K
s7
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%
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%
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%
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%
%
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%
V ;; / V >I
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%
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--
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%
%
-.
7
%
%
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%
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%
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%
*-1
V ;; / V >I /
K
Reverse Diode
:@ 56 4@ ?E:?@ FD 7@ CH2 C5 4FCC
6?E
II
:@ 56 AF=D6 4FCC
6?E
I I$]bY`R
:@ 56 7@ CH2 C5 G@ =E2 86
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IPB144N12N3 G
IPI147N12N3 G
2 Drain current
P a\a5S"T 9#
I ;5S"T 9 V >I"
/
120
60
100
50
80
40
I D [A]
P tot [W]
1 Power dissipation
60
30
40
20
20
10
0
IPP147N12N3 G
0
0
50
100
150
200
0
50
T C [°C]
100
150
200
T C [°C]
3 Safe operating area
4 Max. transient thermal impedance
I ;5S"V ;I T 9 U D 5(
Z aUA95S"t ]#
A2 C2 >6E6C t ]
A2 C2 >6E6C
D 5t ]'T
103
101
WD
102
W D
100
W D
Z thJC [K/W]
(&-
I D [A]
>D
10
;9
1
>D
(&*
(&)
10-1
100
(&((&(*
(&()
D:?8=6 AF=D6
10-1
10
10-2
-1
10
0
10
1
10
2
10
3
V DS [V]
, 6G
10-5
10-4
10-3
10-2
10-1
100
t p [s]
A2 86
IPB144N12N3 G
IPI147N12N3 G
IPP147N12N3 G
5 Typ. output characteristics
6 Typ. drain-source on resistance
I ;5S"V ;I T W U
R ;I"\[#5S"I ; T W U
A2 C
2 >6E6C V >I
A2 C2 >6E6C
V >I
200
25
/
/
/
/
20
/
/
R DS(on) [m ]
I D [A]
150
/
100
15
/
10
/
50
/
5
/
/
0
0
0
1
2
3
4
5
0
20
40
V DS [V]
60
80
I D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I ;5S"V >I L
V ;Ih6*hI ;hR ;I"\[#ZNe
g S`5S"I ; T W U
A2 C
2 >6E6C T W
100
80
70
80
60
50
I D [A]
g fs [S]
60
40
40
30
20
20
U
U
10
0
0
0
2
4
6
8
, 6G
0
10
20
30
40
50
60
I D [A]
V GS [V]
A2 86
IPB144N12N3 G
IPI147N12N3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R ;I"\[#5S"T W I ; V >I
/
V >I"aU#5S"T W V >I5V ;I
IPP147N12N3 G
A2 C2 >6E6C
I;
35
4
30
3.5
W
3
25
20
V GS(th) [V]
R DS(on) [m ]
W
2.5
15
af]
2
1.5
10
1
5
0.5
0
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T j [°C]
T j [°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
C 5S"V ;I V >I / f
' # K
I =5S"V I;#
A2 C2 >6E6C
TW
104
103
9V``
103
102
9\``
U
I F [A]
C [pF]
U
U
U
102
101
9_``
101
100
0
20
40
60
80
V DS [V]
, 6G
0
0.5
1
1.5
2
V SD [V]
A2 86
IPB144N12N3 G
IPI147N12N3 G
13 Avalanche characteristics
14 Typ. gate charge
I 7I5S"t 7K R >I "
V >I5S"Q TNaR I ; AF=D65
A2 C
2 >6E6C T W"`aN_a#
A2 C2 >6E6C
V ;;
102
IPP147N12N3 G
10
/
8
/
U
/
6
10
V GS [V]
I AS [A]
U
1
U
4
2
100
0
100
101
102
103
0
10
t AV [µs]
20
30
40
Q gate [nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V 8H";II#5S"T W I ;
>
135
V >I
Qg
130
V BR(DSS) [V]
125
120
V T `"aU#
115
110
Q T "aU#
Q `d
Q T`
105
-60
-20
20
60
100
140
Q g ate
Q TQ
180
T j [°C]
, 6G
A2 86
IPB144N12N3 G
IPI147N12N3 G
IPP147N12N3 G
PG-TO220-3: Outline
, 6G
A2 86
IPB144N12N3 G
IPI147N12N3 G
IPP147N12N3 G
PG-TO262-3-1 (I²PAK)
, 6G
A2 86
IPB144N12N3 G
IPI147N12N3 G
IPP147N12N3 G
PG-TO-263 (D²-Pak)
, 6G
A2 86
IPB144N12N3 G
IPI147N12N3 G
IPP147N12N3 G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
4@ ?E2 4EE
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Warnings
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on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
, 6G
A2 86
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